From GAA to 3D Stacked FET: Expanding the Transistor into the Third Dimension | Samsung Semiconductor Global

Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm

Samsung Electronics

107 points by its_ajseven 124 days ago semiconductor.samsung.com 35 comments

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https://en.wikipedia.org/wiki/Field-effect_transistor

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